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CHA2098B
20-40GHz High Gain Buffer Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2098B is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a P-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
25
Vd1
Vd2,3
IN
OUT
Vg1
Vg2
Vg3
Typical on-wafer results :
Main Features
Broadband performances : 20-40GHz 16dBm output power ( 1dB gain comp. ) 19dB 1.5dB gain Low DC power consumption, 150mA @ 3.5V Chip size : 1.67 X 0.97 X 0.10 mm
15 5 -5 -15 -25 10 15 20 25 30 35 40 45 Frequency ( GHz )
Main Characteristics
Tamb. = 25C Symbol
Fop G P1dB Id Small signal gain Output power at 1dB gain compression Bias current
Parameter
Operating frequency range
Min
20 17 13
Typ
19 16 150
Max
40
Unit
GHz dB dBm
200
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20981233 21- August-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2098B
Tamb = +25C, Vd1,2,3 = 3.5V Symbol
Fop G G Is P1db P03 VSWRin
20-40GHz High Gain Buffer Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Output power at 1dB gain compression (1) Output power at 3dB gain compression Input VSWR (1) 13 15
Min
20 17
Typ
Max
40
Unit
GHz dB dB dB dBm dBm
19 1.5 30 16 16 3.0:1 3.0:1 10.0 150 200
VSWRout Output VSWR (1) NF Id Noise figure Bias current
dB mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Operating temperature range Storage temperature range
Parameter
Values
4.0 200 -2.0 to +0.4 -40 to +85 -55 to +155
Unit
V mA V C C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20981233 21-August-01
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz High Gain Buffer Amplifier
Typical Performance
Tamb=+25C, Vd=3.5V, Vg=-0.1V
20 19 18 17 GAIN (dB) 16 15 14 13 12 11 10 18 22 26 30 FREQUENCY (GHz) 34 38
CHA2098B
Gain vs Frequency
0 -5 -10 -15 Input -20 -25 -30 18 22 26 30 34 38 FREQUENCY (GHz) -20 -25 -30 0 -5 -10 -15
Output
Input and Output Loss vs. Frequency
Ref. : DSCHA20981233 21-August-01
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
CHA2098B
25 24 23 22 GAIN (dB) 21 20 19 18 17 16 15 20 22 24 26 Gain P-1dB
20-40GHz High Gain Buffer Amplifier
20 18 16 14 12 10 8 6 4 2 0 28 30 32 34 36 38 FREQUENCY (GHz) P-1dB (dBm)
Gain and Compressed Power vs. Frequency
20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 10 11 12 13 14 15 16 17 18 19 OUTPUT POWER (dBm) PAE Gain 20 18 16 14 12 10 8 6 4 2 0 POWER ADDED EFFICIENCY (%)
Gain and Efficiency Vs Output Power (F=30GHz)
25 Gain POUT (dBm), GAIN (dB) 20 Pout IDS (mA) 15 190 220 250
10 IDS
160
5
130
0 -12
100 -10 -8 -6 -4 -2 0 INPUT POWER (dBm)
Gain, Output Power and IDS vs. Input Power (F=38GHz)
Ref. : DSCHA20981233 21-August-01
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz High Gain Buffer Amplifier
Typical Scattering Parameters (on Wafer)
Bias conditions: Vd=3.5V Vg=0V Freq. GHz
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
CHA2098B
S11 dB
-18.37 -19.49 -20.63 -22.15 -24.36 -26.49 -24.05 -22.26 -21.20 -20.46 -20.57 -20.37 -20.01 -20.38 -20.51 -21.26 -21.82 -22.62 -21.97 -22.69 -23.12 -22.50 -22.15 -20.65 -18.94 -17.28 -14.60 -12.20 -10.21 -8.25 -6.83 -5.68 -4.73
S11 /
116.1 113.8 113.4 114.4 120.5 140.0 163.8 156.6 159.0 150.9 148.8 145.4 141.8 136.9 132.4 127.2 125.6 129.0 127.4 118.7 114.3 103.9 91.0 71.9 39.2 8.4 -18.5 -40.3 -59.7 -80.9 -97.6 -113.3 -129.1
S12 dB
-69.59 -65.95 -65.20 -60.58 -58.79 -54.42 -51.83 -52.04 -60.55 -54.03 -50.49 -49.95 -49.48 -48.65 -48.33 -49.24 -47.95 -47.60 -48.30 -45.57 -47.53 -48.92 -48.07 -49.33 -46.75 -47.08 -48.00 -47.52 -46.21 -49.74 -48.99 -53.12 -50.08
S12 /
148.0 154.4 -158.1 155.1 155.7 136.8 127.3 81.3 107.0 100.6 90.6 75.8 67.0 53.7 37.5 25.1 22.8 3.6 -3.7 -22.6 -45.6 -49.1 -69.1 -67.4 -105.6 -108.5 -134.6 -160.4 160.6 147.7 136.5 32.5 -34.8
S21 dB
16.72 18.13 18.90 19.31 19.42 19.97 19.63 18.79 18.65 19.86 19.82 19.89 19.82 19.60 19.53 19.45 19.64 19.53 19.28 19.27 19.15 18.96 18.52 18.36 18.43 18.34 17.82 17.39 16.75 15.88 14.64 13.15 11.65
S21 /
130.6 102.0 73.7 46.4 22.3 -1.6 -27.5 -46.8 -57.2 -80.0 -102.7 -121.3 -142.0 -161.3 -179.4 162.3 144.2 123.6 104.7 86.4 66.9 46.8 28.3 10.1 -9.4 -31.1 -53.7 -76.8 -99.2 -123.1 -145.6 -167.2 172.2
S22 dB
-7.99 -10.02 -13.84 -16.29 -19.17 -18.06 -16.16 -16.79 -17.79 -18.36 -15.84 -15.59 -14.72 -14.17 -13.37 -12.84 -13.15 -12.50 -12.28 -11.93 -11.82 -12.13 -12.07 -11.87 -10.98 -10.60 -10.11 -9.83 -9.28 -8.54 -8.12 -7.61 -7.25
S22 /
77.7 51.4 20.3 -13.8 -64.4 -99.8 -138.5 -168.8 168.2 -171.8 175.6 171.0 159.9 154.0 144.0 131.6 123.6 114.6 102.1 93.5 79.2 67.7 58.5 47.6 36.1 19.8 6.4 -7.0 -20.8 -37.0 -50.7 -62.9 -77.1
Ref. : DSCHA20981233 21-August-01
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2098B
20-40GHz High Gain Buffer Amplifier
Chip Assembly and Mechanical Data
To Vdd DC Drain supply feed
100pF
IN
OUT
100pF
100pF
To Vgs1 DC Gate supply feed
To Vgs2,3 DC Gate supply feed
Note : Supply feed should be capacitively bypassed.
1670 +/- 10 880 550
970 +/- 10
520
520
240 420 720
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA20981233 21-August-01
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz High Gain Buffer Amplifier
CHA2098B
Typical Bias Tuning
The circuit schematic is given below :
Vd1 Vd2,3
IN
OU T
Vg1
Vg 2
Vg 3
For typical operation, the three drain biases are connected altogether. In a same way, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 130mA. A separate access to the gate voltages of each stage ( Vg1,2&3 ) is provided for the fine tuning of the stages regarding the application.
Ref. : DSCHA20981233 21-August-01
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2098B
20-40GHz High Gain Buffer Amplifier
Ordering Information
Chip form : CHA2098B99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA20981233 21-August-01
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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